Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP
This document is a product datasheet for the NXP PSMN2R4-30MLD, a logic level gate drive N-channel enhancement mode MOSFET. It utilizes NXP's unique NextPowerS3 technology, which employs a Schottky-like diode structure to deliver high efficiency and low spiking performance without the high leakage current issues found in traditional integrated Schottky MOSFETs. The device is housed in an LFPAK33 (SOT1210) package and is optimized for 4.5 V gate drive applications.
| Junction temperature | -55 to 175 °C |
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The device utilizes NXP's unique NextPowerS3 technology, which provides Schottky-like performance with low leakage current.
The MOSFET is optimized for a 4.5 V gate drive.
The maximum junction temperature is 175 °C.