Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
This document is a product data sheet for the NXP Semiconductors PMGD290UCEA, a complementary N/P-channel enhancement mode Field-Effect Transistor (FET). The device utilizes Trench MOSFET technology and is housed in a very small SOT363 Surface-Mounted Device (SMD) plastic package. It features 2 kV ESD protection and is AEC-Q101 qualified for automotive applications.
The datasheet provides quick reference data, pinning information, ordering details, marking codes, and limiting values. Key specifications include a drain-source voltage of ±20 V, continuous drain currents of up to 725 mA (N-channel) and 500 mA (P-channel), and total power dissipation characteristics dependent on junction temperature.
| Drain-source voltage (VDS) | ±20 V |
|---|---|
| Gate-source voltage (VGS) | -8 to 8 V |
| Continuous drain current (N-channel) | 725 mA |
| Continuous drain current (P-channel) | -500 mA |
| Package type | SOT363 (TSSOP6) |
| ESD protection | 2 kV |
| Junction temperature range (Tj) | -55 to 150 °C |
The device is suitable for relay drivers, high-speed line drivers, low-side loadswitches, switching circuits, and automotive applications.
Yes, the PMGD290UCEA is AEC-Q101 qualified.