P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
This document is a preliminary datasheet for the PMV250EPEA, a P-channel enhancement mode Field-Effect Transistor (FET). The device utilizes Trench MOSFET technology and is housed in a small SOT23 (TO-236AB) surface-mounted plastic package. It features logic-level compatibility, very fast switching speeds, and 1kV ESD protection.
| Drain-source voltage (VDS) | -40 V |
|---|---|
| Gate-source voltage (VES) | -20 to +20 V |
| Drain current (ID) | -1.5 A |
| Package type | SOT23 (TO-236AB) |
| Technology | Trench MOSFET |
The maximum junction temperature (Tj) is 150 °C.
Yes, the PMV250EPEA is AEC-Q101 qualified.