NXP PSMN1R4-30YLD MOSFET Datasheet

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP


NXP PSMN1R4-30YLD MOSFET Datasheet - cover page
Brand
NXP
Category
MOSFET
Document type
Datasheet
Language
English
Pages
14
File format
PDF
File size
312 KB
Published
30 May, 2014
Updated
25 September, 2023
MD5 checksum
0C7DF70C548FB0718466D2F7BDD951B1

About this manual

This document is a preliminary datasheet for the NXP PSMN1R4-30YLD, a logic level gate drive N-channel enhancement mode MOSFET. The device utilizes NXP's unique NextPowerS3 portfolio with SchottkyPlus technology, designed to deliver high efficiency and low spiking performance suitable for high switching frequency applications. It is available in an LFPAK56 (Power-SO8) package.

What's inside

  • General description
  • Features and benefits
  • Applications
  • Quick reference data
  • Static characteristics
  • Dynamic characteristics
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics

Specifications

Drain-source voltage30 V
Total power dissipation166 W
Package typeLFPAK56
TechnologyNextPowerS3
Download PDF (312 KB)

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