Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP
This document is a preliminary datasheet for the NXP PSMN1R4-30YLD, a logic level gate drive N-channel enhancement mode MOSFET. The device utilizes NXP's unique NextPowerS3 portfolio with SchottkyPlus technology, designed to deliver high efficiency and low spiking performance suitable for high switching frequency applications. It is available in an LFPAK56 (Power-SO8) package.
| Drain-source voltage | 30 V |
|---|---|
| Total power dissipation | 166 W |
| Package type | LFPAK56 |
| Technology | NextPowerS3 |