Planar passivated Silicon Controlled Rectifier (SCR) in a SOT404 (D2PAK) surface mountable plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150
The document describes the TYN20B-800T, a planar passivated Silicon Controlled Rectifier (SCR) housed in a surface mountable plastic D2PAK (SOT404) package. It is designed for applications requiring very high inrush current capability, high thermal cycling performance, and operation at high junction temperatures up to 150 °C.
Key features include high bidirectional blocking voltage capability, suitability for Capacitive Discharge Ignition (CDI) and Crowbar protection circuits, and a surface mountable package. The datasheet provides quick reference data, pinning information, limiting values, thermal characteristics, and detailed electrical characteristics including static and dynamic parameters.
| Repetitive peak off-state voltage (VpRM) | 800 V |
|---|---|
| Repetitive peak reverse voltage (VerRM) | 800 V |
| Maximum junction temperature (Tj) | 150 °C |
The device uses a SOT404 (D2PAK) surface mountable plastic package.
The device supports a high junction temperature capability of 150 °C.