Planar passivated Silicon Controlled Rectifier (SCR) in a SOT404 (D2PAK) surface mountable plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150
The document describes the NXP TYN20B-600T, a planar passivated Silicon Controlled Rectifier (SCR) housed in a surface-mountable D2PAK (SOT404) plastic package. It is designed for applications requiring high inrush current capability, robust thermal cycling performance, and operation at junction temperatures up to 150 °C.
Key features include very high bidirectional blocking voltage of 600 V, a non-repetitive peak on-state current (ITSM) of 231 A, and planar passivation for enhanced reliability. The datasheet provides detailed static and dynamic characteristics, thermal resistance values, package dimensions, and soldering guidelines.
| Repetitive peak off-state voltage (VDRM) | 600 V |
|---|---|
| Maximum junction temperature (Tj(max)) | 150 °C |
The device supports a maximum junction temperature of 150 °C.
It uses a SOT404 (D2PAK) surface mountable plastic package.
It is intended for Capacitive Discharge Ignition (CDI), Crowbar protection, Inrush protection, Motor control, and Voltage regulation.