NXP PSMN0R9-30YLD MOSFET

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP

Brand: NXP
Category: MOSFET
Document type: Datasheet
Language: English
Pages: 14
File format: PDF
File size: 318 KB
Published: 30 May, 2014
Updated: 25 September, 2023
MD5 checksum: B9BFAAA6EF277F4E3510D2FB87BC374C
PDF: NXP PSMN0R9-30YLD MOSFET PDF

About this manual

This document is a preliminary datasheet for the NXP PSMNOR9-30YLD, an N-channel 30 V, 0.87 mQ logic level MOSFET housed in an LFPAK56 (Power-SO8) package. The device utilizes NextPowerS3 technology with SchottkyPlus features to deliver high efficiency and low spiking performance suitable for high switching frequency applications.

What's inside

General description
Features and benefits
Applications
Quick reference data
Limiting values
Thermal characteristics
Characteristics

Specifications

Drain-source voltage	30 V
Total power dissipation	349 W
Junction temperature range	-55 to 175 °C
On-state resistance (typical)	0.87 mQ

Frequently asked questions

What is the maximum total power dissipation at a mounting base temperature of 25 °C?

The MOSFET can dissipate up to 349 W under conditions where the mounting base temperature is 25 °C.

What is the maximum junction temperature rating for this component?

The MOSFET is rated to operate with a junction temperature up to 175 °C.

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