NXP PSMN1R1-30EL MOSFET Datasheet

Logic level N-channel MOSFET in I2PAK package qualified to 175


NXP PSMN1R1-30EL MOSFET Datasheet - cover page
Brand
NXP
Category
MOSFET
Document type
Datasheet
Language
English
Pages
14
File format
PDF
File size
276 KB
Published
30 May, 2014
Updated
25 September, 2023
MD5 checksum
6708883ACFF53F8D44940D3843665DD7

About this manual

The document is a product datasheet for the PSMN1R1-30EL, an N-channel 30 V, 1.3 mΩ logic level MOSFET housed in an I2PAK (SOT226) package. It is qualified to operate at junction temperatures up to 175 °C and is designed for use in industrial, communications, and domestic equipment.

Key features include high efficiency due to low switching and conduction losses, suitability for logic level gate drive sources, and applications such as DC-to-DC converters, load switching, motor control, and server power supplies.

What's inside

  • General description
  • Features and benefits
  • Applications
  • Quick reference data
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics
  • Characteristics

Specifications

Junction temperature range-55 to 175 °C
Package typeI2PAK plastic single-ended package

Frequently asked questions

What are the main applications for this MOSFET?

It is suitable for DC-to-DC converters, load switching, motor control, and server power supplies.

Is this MOSFET designed for logic level gate drive?

Yes, it is suitable for logic level gate drive sources.

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