N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
This document is a product data sheet for the NXP PMPB215ENEA, an 80 V, single N-channel Trench MOSFET. The device is housed in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package and utilizes Trench MOSFET technology. It features an exposed drain pad for excellent thermal conduction and is AEC-Q101 qualified.
| Drain-source voltage | 80 V |
|---|---|
| Package type | DFN2020MD-6 (SOT1220) |
| On-state resistance | 175 mΩ (Typ) |
| Operating temperature range | -55 °C to 150 °C |
| Storage temperature range | -65 °C to 150 °C |
| Total gate charge | 7.2 nC (Max) |
The device is suitable for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
Yes, the device is AEC-Q101 qualified.
The maximum junction temperature is 150 °C.