Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package.
The document describes the NXP PMEG2002AESF, a Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier designed for high efficiency DC-to-DC conversion and switch mode power supply applications. It features an integrated guard ring for stress protection within a leadless ultra-small Surface-Mounted Device (SMD) package.
Key specifications include a maximum reverse voltage of 20 V, a typical forward voltage of 245 mV at 10 mA, and a low average forward current capability of 0.2 A. The device is available in the DSNO603-2 (SOD962-2) package with a typical height of 0.3 mm.
| Reverse voltage (VR) | 20 V |
|---|---|
| Forward voltage (Vf) typ. | 245 mV |
| Reverse current (IR) typ. | 5 yA |
| Package type | DSNO603-2 (SOD962-2) |
| Package height typ. | 0.3 mm |
The typical package height for this leadless SMD device is 0.3 mm.