Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150
The NXP TYN20-800T is a planar passivated Silicon Controlled Rectifier (SCR) housed in a SOT78 (TO-220AB) plastic package. It is designed for applications requiring very high inrush current capability, high thermal cycling performance, and high junction temperature capability up to 150°C. Key features include high bidirectional blocking voltage, high thermal cycling performance, and planar passivation for voltage ruggedness and reliability.
| Repetitive peak off-state voltage (VDRM) | 800 V |
|---|---|
| Repetitive peak reverse voltage (VRRM) | 800 V |
| Maximum junction temperature (Tj) | 150 °C |
The device is intended for use in Capacitive Discharge Ignition (CDI), Crowbar protection, Inrush protection, Motor control, and Voltage regulation.
The device supports a maximum junction temperature (Tj) of 150°C.
The component is available in a SOT78 (TO-220AB) plastic package.