P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
The document details the specifications of the PMXB120EPE MOSFET, which utilizes Trench MOSFET technology. It is designed as a surface-mounted device (SMD) with an exposed drain pad for excellent thermal conduction and includes built-in ElectroStatic Discharge (ESD) protection rated at 1 kV HBM.
| Drain-source voltage (VDS) | -30 V |
|---|---|
| Gate-source voltage (VES) | -20 to 20 V |
| Drain current (ID) | -2.4 A |
| On-state resistance (RDS(on)) | 100 mQ to 120 mQ |
| Package type | DFN1010D-3 (SOT1215) |
| Package dimensions | 1.1 x 1.0 x 0.37 mm |