P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
This document describes the NXP PMN42XPEA, a P-channel enhancement mode Field-Effect Transistor (FET) housed in a small SOT457 (SC-74) Surface-Mounted Device plastic package. The device utilizes Trench MOSFET technology and is qualified under AEC-Q101 standards.
| Drain-source voltage (VDS) | -20 V |
|---|---|
| Gate-source voltage (VGS) | -12 to 12 V |
| Drain current (ID) | -5.7 A |
| Drain-source on-state resistance (RDSon) | 41 to 46 mΩ |
| Package type | SOT457 (SC-74) |
The device is suitable for relay drivers, high-speed line drivers, high-side load switches, and switching circuits.
Yes, it is AEC-Q101 qualified.