NXP PMV130ENEA MOSFET Datasheet

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Brand: NXP
Category: MOSFET
Document type: Datasheet
Language: English
Pages: 16
File format: PDF
File size: 268 KB
Published: 30 May, 2014
Updated: 25 September, 2023
MD5 checksum: E9F1D86B1C330AB4504F94EDBAF9845D
PDF: NXP PMV130ENEA MOSFET Datasheet PDF

About this manual

This document is a preliminary datasheet for the NXP PMV130ENEA, an N-channel enhancement mode Field-Effect Transistor (FET). The device is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package and utilizes Trench MOSFET technology. Key features include logic-level compatibility, very fast switching speeds, 1 kV ESD protection, and AEC-Q101 qualification for automotive applications.

What's inside

General description
Features and benefits
Applications
Quick reference data
Pinning information
Ordering information
Limiting values
Thermal characteristics
Characteristics
Revision history

Specifications

Drain-source voltage	40 V
On-state resistance	95-120 mΩ
Package type	SOT23 (TO-236AB)
Junction temperature range	-55 to 150 °C
Total gate charge	2.4-3.6 nC

Frequently asked questions

What are the main applications of the PMV130ENEA?

The device is suitable for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

Is the PMV130ENEA qualified for automotive use?

Yes, the device is AEC-Q101 qualified.

What is the maximum non-repetitive drain-source avalanche energy?

The maximum EDS(AL)S is 460 mJ under specified conditions.

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