P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
The NXP PMXB75UPE is a P-channel enhancement mode Field-Effect Transistor (FET) designed for portable applications. It utilizes Trench MOSFET technology and is housed in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package. The device features an exposed drain pad for excellent thermal conduction and includes ElectroStatic Discharge (ESD) protection rated at 1.5 kV HBM.
| Package type | DFN1010D-3 (SOT1215) |
|---|