NXP PSMN013-100BS MOSFET Datasheet

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Brand: NXP
Category: MOSFET
Document type: Datasheet
Language: English
Pages: 14
File format: PDF
File size: 288 KB
Published: 30 May, 2014
Updated: 25 September, 2023
MD5 checksum: 9B2A9A16BEEA00DA8CC548FF1066B26A
PDF: NXP PSMN013-100BS MOSFET Datasheet PDF

About this manual

This document is a product datasheet for the NXP PSMN013-100BS, an N-channel enhancement mode Field-Effect Transistor (FET). The device is a standard level MOSFET in a D2PAK (SOT404) plastic package, qualified for operation up to 175°C. It utilizes Trench MOSFET technology and is designed for use in industrial, communications, and domestic equipment.

What's inside

General description
Features and benefits
Applications
Quick reference data
Pinning information
Ordering information
Limiting values
Thermal characteristics
Characteristics

Specifications

Junction temperature	-55 to 175 °C

Frequently asked questions

What are the recommended applications for this component?

It is suitable for DC-to-DC converters, load switching, motor control, and server power supplies.

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