NXP PSMN4R2-30MLD MOSFET Datasheet

About this manual

This document is a product data sheet for the NXP PSMN4R2-30MLD, an N-channel 30 V, 4.2 mΩ logic level MOSFET utilizing NextPowerS3 Technology. It features SchottkyPlus technology to deliver high efficiency and low spiking performance suitable for high switching frequency applications.

What's inside

• General description
• Features and benefits
• Applications
• Quick reference data
• Pinning information
• Limiting values
• Thermal characteristics
• Static characteristics

Frequently asked questions

What is the maximum continuous drain current at 25 °C?

The maximum continuous drain current is 70 A when the mounting base temperature is 25 °C.

What is the maximum total power dissipation at 25 °C?

The device can dissipate a maximum of 65 W when the mounting base temperature is 25 °C.

What is the typical on-state resistance at a gate-source voltage of 4.5 V?

The typical drain-source on-state resistance is 5.7 mQ when the gate-source voltage is 4.5 V and the current is 20 A.