N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
The document describes the NXP PMPB95ENEA, an 80 V single N-channel enhancement mode Field-Effect Transistor (FET). It utilizes Trench MOSFET technology and is housed in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package. Key features include an exposed drain pad for excellent thermal conduction, tin-plated solderable side pads for optical inspection, and AEC-Q101 qualification.
| Package type | DFN2020MD-6 (SOT1220) |
|---|---|
| Package dimensions | 2 x 2 x 0.65 mm |
| Junction temperature range | -55 to 150 °C |
Yes, the device is AEC-Q101 qualified.
The leadless SMD plastic package measures 2 x 2 x 0.65 mm.