P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
The document provides preliminary data for the PMXB65UPE, which is a P-channel enhancement mode Field-Effect Transistor (FET). It utilizes Trench MOSFET technology and comes in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device plastic package. The device features an exposed drain pad for excellent thermal conduction and includes ElectroStatic Discharge (ESD) protection rated at 1.5 kV HBM.
| Gate-source voltage (VES) | -8 to 8 V |
|---|---|
| Package type | DFN1010D-3 (SOT1215) |
| Junction temperature range | -55 to 150 °C |
The gate-source threshold voltage (VGS(th)) is typically -0.68 V.
Yes, it is designed as a high-side load switch and charging switch for portable devices.