P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
The NXP PMV48XPA is a P-channel enhancement mode Field-Effect Transistor (FET) housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It utilizes Trench MOSFET technology to provide very fast switching speeds and is logic-level compatible.
The device is qualified under the AEC-Q101 standard, making it suitable for automotive applications. It is designed for use in high-side load switches, high-speed line drivers, relay drivers, and general switching circuits. This manual is written in Chinese.
| Drain-source voltage | -20 V |
|---|---|
| Gate-source voltage | -12 to 12 V |
| Drain current | -3.5 A |
| Drain-source on-state resistance | 48 to 55 mΩ |
| Package type | SOT23 (TO-236AB) |
| Junction temperature | -55 to 150 °C |
The device is available in a TO-236AB plastic surface-mounted package with 3 leads.
Yes, the device is AEC-Q101 qualified.
It is suitable for high-side load switches, high-speed line drivers, relay drivers, and switching circuits.