Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
The document describes the NXP BUK9875-100A, a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is available in an SC-73 plastic surface-mounted package with increased heatsink capability.
| Drain-source on-state resistance (RDS(on)) | 62 mΩ to 75 mΩ |
|---|---|
| Package type | SC-73 plastic surface-mounted package |
It is suitable for 12V, 24V and 42 V loads in automotive and general purpose power switching.
Yes, it has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.