Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
This document is a product data sheet for the NXP BUK7K12-60E, a dual standard level N-channel MOSFET utilizing TrenchMOS technology. The device is housed in an LFPAKS6D (Dual Power-SO8) package and has been designed and qualified to AEC Q101 standards for high performance automotive applications.
Key features include compliance with the Q101 standard, a repetitive avalanche rating, and suitability for thermally demanding environments due to a 175 °C junction temperature rating. The MOSFET is intended for use in 12 V automotive systems controlling motors, lamps, solenoids, and transmission components.
| Package type | LFPAKS6D (Dual Power-SO8) |
|---|---|
| Junction temperature rating | 175 °C |
The device uses an LFPAKS6D (Dual Power-SO8) package.
Yes, it is designed and qualified to AEC Q101 standard.
It is suitable for motors, lamps, solenoid control, and transmission control.