Key facts
- Brand
- Alpha
- Model
- AOL1420
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-11
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Alpha and Omega Semiconductor AOL1420 N-Channel Enhancement Mode Field Effect Transistor Datasheet
The AOL1420 is an N-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It features low gate charge and low gate resistance, making it ideally suited for use as a low side switch in CPU core power conversion applications.
This document provides comprehensive electrical and thermal characteristics, including absolute maximum ratings, static parameters such as breakdown voltage and on-state resistance, dynamic switching parameters like total gate charge, and typical performance curves for various operating conditions.
Alpha AOL1420 specifications
| Drain-Source Voltage (VDS) | 30 V |
|---|---|
| Continuous Drain Current (Tj=25°C) | 85 A |
| Power Dissipation (Tc=100°C) | 1.3 W |
| Junction and Storage Temperature Range | -55 to 175 °C |
| On state drain current (Typ) | 85 A |
Source: Alpha and Omega Semiconductor AOL1420 N-Channel Enhancement Mode Field Effect Transistor Datasheet
All Alpha AOL1420 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum power dissipation at an ambient temperature of 70°C?
The maximum power dissipation is limited to 1.3 W when the ambient temperature reaches 70°C.
From: Alpha and Omega Semiconductor AOL1420 N-Channel Enhancement Mode Field Effect Transistor Datasheet
What is the maximum junction-to-ambient thermal resistance in steady-state conditions?
The device has a maximum junction-to-ambient thermal resistance of 60 °C/W in steady-state operation.
From: Alpha & Omega AOL1420 N-Channel Enhancement Mode FET Datasheet