Infineon's D2520N IFBIP D rectifier diode datasheet provides electrical, thermal, mechanical specifications and performance data.
The D2520N IFBIP D is a high‑power rectifier diode. This datasheet lists its electrical ratings, thermal characteristics, mechanical dimensions and transient thermal impedance for various cooling configurations.
Key parameters include a maximum reverse voltage of 2200 V, surge current up to 41 kA, junction‑to‑case thermal resistance of 0.022 °C/W, and a maximum junction temperature of 175 °C. Mechanical data such as a 25 mm creepage distance, 520 g weight and a clamping force of 15–24 kN are also provided. This manual is written in German.
| Maximum reverse voltage (VRRM) | 2200 V |
|---|---|
| Maximum RMS on‑state current (I_FRMSM) | 4950 A |
| Average on‑state current (IFAVM) | 2520 A |
| Maximum junction temperature (Tvj max) | 175 °C |
| Creepage distance | 25 mm |
| Weight | 520 g |
| Clamping force | 15–24 kN |
The diode can withstand a repetitive peak reverse voltage of 2200 V.
The maximum junction temperature is specified as 175 °C.