This document is a preliminary datasheet for the NEC NE680M03, an NPN silicon transistor designed for low noise, high gain, and low cost applications. It utilizes the new M03 package, which offers a low profile height of 0.59 mm and a flat lead style to improve RF performance, making it ideal for portable wireless applications.
| Gain Bandwidth Product (fT) | 8 GHz |
|---|---|
| Noise Figure (NF) | 1.9 dB at 2 GHz |
| Package Height | 0.59 mm |
| Collector to Base Voltage (VCBO) | 20 V |
| Total Power Dissipation | 125 mW |
| Collector Current (IC) | 35 mA |
The noise figure is 1.9 dB at 2 GHz.
The maximum collector current is 35 mA.
No, these products are not intended for use in life support devices or systems.