This datasheet is for the SSM02N60P, and it describes the product's features, such as maximum voltage, maximum current, maximum power dissipation, and maximum temperature.
The document is a technical datasheet for the Silicon Standard SSM02N60P, an N-channel enhancement-mode power MOSFET. It features a repetitive avalanche rating of 600V and is designed with simple drive requirements suitable for low-power applications.
The device is packaged in a TO-220 case and is well-suited for use in DC/DC and AC/DC converters within telecom, industrial, and consumer electronics sectors. The datasheet provides absolute maximum ratings, electrical characteristics, thermal data, and typical application circuit diagrams.
| Drain-Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) @ 25°C | 2 A |
| Total Power Dissipation (PD) | 39 W |
| Package Type | TO-220 |
The absolute maximum rating for total power dissipation is 39 W at a junction temperature of 25°C.
This device is rated to withstand a single pulse avalanche energy of 130 mJ.