This document describes the features and characteristics of the 16 Mbit (x8/x16) Concurrent SuperFlash products, SST36VF1601E / SST36VF1602E, including dual bank architecture, single voltage operation, high reliability, and low power consumption.
The SST36VF1601E and SST36VF1602E are 16 Mbit CMOS Concurrent SuperFlash flash memories offered in 1M × 16 or 2M × 8 organizations. They feature dual‑bank architecture for simultaneous read/write, sector and block protection, and low‑power operation from a 2.7‑3.6 V supply.
The devices provide fast read access (70 ns), typical program time of 7 µs, and endurance of 100 k cycles with data retention over 100 years. They are supplied in 48‑ball TFBGA and 48‑lead TSOP packages and include hardware and software data‑protection schemes.
| Memory organization | 1M × 16 or 2M × 8 |
|---|---|
| Total capacity | 16 Mbit |
| Supply voltage | 2.7‑3.6 V |
| Endurance (typical) | 100,000 cycles |
| Data retention | >100 years |
| Active current (typical) | 6 mA |
| Standby current (typical) | 4 A |
| Auto Low Power mode current | 4 µA typical |
| Fast read access time | 70 ns |
| Program time (typical) | 7 µs |
| Sector‑erase time | 18 ms |
| Block‑erase time | 18 ms |
| Chip‑erase time | 35 ms |
| Package options | 48‑ball TFBGA (6 mm × 8 mm) and 48‑lead TSOP (12 mm × 20 mm) |
They operate from a single 2.7 V to 3.6 V supply for both read and write operations.
A typical program operation completes in about 7 µs.
The devices are rated for 100,000 program/erase cycles (typical).
Fast read access time is specified as 70 ns.