SSM01N60H is a N-channel enhancement-mode power MOSFET produced by SiliconStandard. Its features are dynamic dv/dt rating up to 600V, repetitive avalanche rating up to 13A, Rdson only 8Ω, fast switching speed, and simple driving requirements.
This document is a datasheet for the Silicon Standard SSM01N60H,J N-Channel Enhancement-Mode Power MOSFET. The device is supplied in the industry-standard TO-252 (H) package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for AC/DC converters. A through-hole version (SSM01N60J) is also available for low-footprint applications.
| Drain-Source Voltage | 600 V |
|---|---|
| Total Power Dissipation @ 25°C | 39 W |
| Operating Junction Temperature Range | -55 to 150 °C |
| Thermal Resistance Junction-case | 3.2 °C/W |
| Package Type | TO-252 (H) |
The maximum continuous drain current at 25°C is 1.6 A.
The maximum total power dissipation at 25°C is 39 W.
The maximum drain-source voltage rating is 600 V.