STMicroelectronics STB14NF10/STP14NF10/STP14NF10FP N-Channel Power MOSFET Datasheet

STMicroelectronics STB14NF10 STP14NF10 STP14NF10FP N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET is a power MOSFET launched by STMicroelectronics company. Its features are extremely low input capacitance and gate charge. It is suitable for use as the main switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications, and also for any applications with low gate drive requirements.


STMicroelectronics STB14NF10/STP14NF10/STP14NF10FP N-Channel Power MOSFET Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
454 KB
Published
07 August, 2012
Updated
30 September, 2023
MD5 checksum
FB7BF10A33EC33A01A97B69AC1C435AB

About this manual

The document describes a series of N-channel 100V, 15A (or 10A for FP variant) TO-220/TO-220FP/D2PAK Power MOSFETs utilizing the STripFET process. These devices are designed to minimize input capacitance and gate charge, making them suitable as primary switches in high-efficiency DC-DC converters for telecom and computer applications.

What's inside

  • Description
  • Applications
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Thermal Data
  • Safe Operating Area
  • Mechanical Data

Specifications

Continuous Drain Current at Tc = 25°C15 A (STB/STP) / 10 A (FP)
Total Dissipation at Tc = 25°C60 W / 25 W

Frequently asked questions

What is the breakdown voltage?

The typical breakdown voltage (V(BR)DSS) is 100 V.

What is the maximum continuous drain current for the STP14NF10FP model?

The maximum continuous drain current for the STP14NF10FP is 10 A.

What is the maximum total power dissipation at a case temperature of 25°C?

The maximum total dissipation is 25 W at a case temperature of 25°C.

What is the typical static drain-source on-resistance for this MOSFET series?

The typical static drain-source on-resistance is 0.115 Ω.

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