This document describes the features and characteristics of the STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, STW14NK50Z N-channel MOSFET products, including extremely low on-resistance, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.
This document provides technical specifications for the STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, and STW14NK50Z N-Channel Super MESH Power MOSFETs. These devices feature an extremely high dv/dt capability, minimized gate charge, and very low intrinsic capacitances, making them ideal for high current, high speed switching applications such as off-line power supplies, adapters, PFC, and lighting.
They are ideal for off-line power supplies, adapters, PFC, and lighting applications.
Yes, they feature built-in back-to-back Zener diodes to protect against voltage transients.