STMicroelectronis latest STB100NF03L-03 is a N-channel 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET with typical RDS(on) = 0.0026 Ω, low threshold drive, 100% avalanche tested and logic level device.
This document provides technical specifications for the STB100NF03L-03, STP100NF03L-03, and STB100NF03L-03-1 N-channel Power MOSFETs. These devices feature a low on-resistance of less than 0.00329 Ohms and are designed for high current and high switching speed applications such as motor control and DC-DC converters. The datasheet details electrical characteristics, safe operating areas, and thermal data for these logic-level devices.
| Drain Current (pulsed) | 400 A |
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The device can withstand a single pulse avalanche energy of 1.9 J.