The RF3100-3K is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 1750MHz to 1780MHz band. The RF3100-3K has a digital control line for low power application to reduce the current drain. The module is an ultra-small 6mmx6mm land grid array with backside ground.
The RF3100-3K is a high-power, high-efficiency linear amplifier IC manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It targets 3V hand-held systems and is designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment operating in the 1750MHz to 1780MHz band.
The module features a single 3V supply, internally matched input and output (50Ω), and includes a digital control line for low power applications. It is packaged as an ultra-small 6mmx6mm land grid array with backside ground.
| Frequency Range | 1750 to 1780 MHz |
|---|---|
| Maximum Linear Output Power | 28 dBm |
| Total Linear Efficiency | 35 % |
| Idle Current (Low Power Mode) | 45mA |
| Supply Voltage | 3V |
| Package Style | LGM (6mmx6mm) |
The device operates in the 1750MHz to 1780MHz band.
The module provides a maximum linear output power of 28 dBm with CDMA modulation.
Yes, it is designed for compatibility with Qualcomm Chipsets.