The RF3100-3 is a high-power, high-efficiency linear amplifier IC from RF Micro Devices targeting 3V hand-held systems. The device is manufactured on an advanced GaAs HBT process and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3100-3 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50Ω input and output that is matched to obtain optimum power, effi- ciency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground.
The RF3100-3 is a high-power, high-efficiency linear amplifier IC manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It targets 3V hand-held systems for use as the final RF amplifier in dual-mode CDMA equipment and spread-spectrum applications within the 1850MHz to 1910MHz band.
| Frequency Range | 1850 to 1910 MHz |
|---|---|
| Maximum Linear Output Power | 28 dBm |
| Total Linear Efficiency | 35 % |
| Idle Current (Low Power Mode) | 45mA |
| Supply Voltage | 3.2 to 4.2 V |
It targets 3V hand-held systems such as CDMA US-PCS and CDMA2000/1X PCS Handsets.
Yes, it is designed for compatibility with Qualcomm Chipsets.