The RF3100-2 is a high-power, high-efficiency linear amplifier module targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual- mode 3V CDMA/AMPS hand-held digital cellular equip- ment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3100-2 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50Ω input and output that is matched to obtain optimum power, effi- ciency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground.
The RF3100-2 is a high-power, high-efficiency linear amplifier module manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It is designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS hand-held digital cellular equipment and spread-spectrum systems within the 824MHz to 849MHz band.
| Frequency Range | 824 to 849 MHz |
|---|---|
| Linear Gain (High Power) | 26 to 29 dB |
| Maximum Linear Output Power | 28 dBm |
| Total Linear Efficiency | 35 % |
| Supply Voltage Range | 3.2 to 4.2 V |
| Quiescent Current (High Power Mode) | 45 to 80 mA |
It is designed for 3V CDMA/AMPS Cellular Handsets, 3V CDMA2000/1X Cellular Handsets, and Spread-Spectrum Systems.
Yes, it is designed for compatibility with Qualcomm Chipsets.