The RF3100-2 is a high-power, high-efficiency linear amplifier module targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual- mode 3V CDMA/AMPS hand-held digital cellular equip- ment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3100-2 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50Ω input and output that is matched to obtain optimum power, effi- ciency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground.