This document describes the features and characteristics of the BTS 7930B High Current PN Half Bridge NovalithIC, including a current of 30A and an on-resistance of 10mΩ + 18mΩ.
The BTS 7930B combines a p‑channel high‑side MOSFET, an n‑channel low‑side MOSFET and an integrated driver in a single TO‑263‑7 package. It is designed for motor‑drive applications, offering low on‑resistance, logic‑level inputs and a range of protection functions such as over‑temperature, over‑voltage, under‑voltage and short‑circuit protection.
Key features include a typical on‑resistance of 28 mΩ, a quiescent current of 7 µA, PWM capability up to 25 kHz, and a programmable current‑limitation of 30 A. The device operates over a temperature range of –40 °C to 150 °C and supports adjustable slew rates and dead‑time generation for optimized EMI performance.
| Typical on‑resistance (RDS(on)) | 28 mΩ @ 25 °C |
|---|---|
| Quiescent current | 7 µA @ 25 °C |
| PWM switching frequency | up to 25 kHz |
| Current limitation level | 30 A typ. |
| Package type | P‑TO‑263‑7 |
The typical on‑state resistance is 28 mΩ at 25 °C.
The device is rated for a typical continuous current of 30 A.
The device is supplied in a P‑TO‑263‑7 (D‑PAK) package.