Fairchild Semiconductor SuperSOT-3 Power MOSFET Maximum Power Enhancement Techniques Application Note

This paper describes how to enhance the power handling capability of the SuperSOTTM-3 Power MOSFET by optimizing the design of copper mounting pads. This design reduces thermal resistance and improves power performance.


Fairchild Semiconductor SuperSOT-3 Power MOSFET Maximum Power Enhancement Techniques Application Note - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Application Note
Language
English
Pages
11
File format
PDF
File size
254 KB
Published
12 July, 2012
Updated
28 September, 2023
MD5 checksum
11F8D49FC5388C731593C5EA395C81EF

About this manual

This document provides methods to maximize the power handling capability of Fairchild Semiconductor's SuperSOT-3 (SOT-23) Power MOSFETs. It focuses on optimizing copper mounting pad design on circuit boards to reduce thermal resistance and improve performance in natural cooling scenarios without heatsinks.

The text analyzes the relationship between copper pad area, placement (top, bottom, or split), and junction-to-ambient thermal resistance. It concludes that enlarging the copper pad to 0.02 square inches directly under the package on the top side of the board is the most cost-effective approach, increasing maximum power dissipation from approximately 0.46W to 0.6W.

What's inside

  • Introduction
  • Theory
  • Result
  • Conclusion
  • Heat Flow Theory Applied to Power MOSFETs

Frequently asked questions

What is the maximum steady-state power dissipation for a recommended layout?

A 0.02 square inch copper pad on the top side of the board can achieve approximately 0.6W.

How much does increasing the copper pad area improve power handling?

Increasing the top-side copper pad from 0.001 to 0.02 square inches results in a 30% increase.

What is the junction-to-case thermal resistance of this package?

The maximized copper lead frame reduces the junction-to-case thermal resistance to 75°C/W.

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