BCW66G is a NPN transistor manufactured by Fairchild Semiconductor. It has a maximum collector current of 1 A, a maximum collector-emitter voltage of 45 V, a maximum collector-base voltage of 75 V, and a maximum emitter-base voltage of 5 V.
This document is a datasheet for the Fairchild Semiconductor BCW66G, an NPN General Purpose Amplifier designed for collector currents up to 500mA. The device is sourced from process 13 and is available in a 4-pin SOT-23 package marked with 'EG'.
The datasheet provides absolute maximum ratings, electrical characteristics, and thermal characteristics. Key electrical parameters include a collector-emitter voltage of 45V, a collector-base breakdown voltage of 75V, and a DC current gain ranging from 50 to 400 depending on operating conditions. Thermal resistance from junction to ambient is specified at 357 °C/W.
| Emitter-Base Voltage | 5 V |
|---|---|
| Collector Current - Continuous | 1 A |
| Operating Junction Temperature Range | - 55 ~ +150 °C |
| Total Device Dissipation | 350 mW |
| Thermal Resistance, Junction to Ambient | 357 °C/W |
| Package Type | SOT-23 |
The device is designed for general purpose amplifier applications at collector currents to 500mA.
The thermal resistance from junction to ambient is 357 °C/W.