BCW61A/B/C/D is a PNP type transistor from FAIRCHILD, with a maximum power of 350mW, a maximum voltage of -32V and a maximum current of -100mA
The document is a technical specification sheet for the BCW61A/B/C/D series of PNP epitaxial silicon transistors manufactured by Fairchild Semiconductor. It details absolute maximum ratings such as collector-base voltage and power dissipation, along with electrical characteristics including DC current gain (hFE) and saturation voltages for different sub-models.
| Collector-Base Voltage (VCBO) | -32 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | -32 V |
| Emitter-Base Voltage (VEBO) | -5.0 V |
| Collector Current (IC) | -100 mA |
| Collector Power Dissipation (PC) | 350 mW |
| Storage Temperature (TSTG) | -55 ~ 150 °C |
| Package Type | SOT-23 |
The document provides a drawing with dimensions in millimeters for the SOT-23 package, such as a length of 2.90 ±0.10 mm.
The maximum collector current is -100 mA.
The maximum collector power dissipation is 350 mW.
The storage temperature range is -55 to 150 °C.