ON Semiconductor MBR120VLSFT1 Schottky Power Rectifier Datasheet

MBR120VLSFT1/D is a Schottky power rectifier using the Schottky Barrier principle with a large area metal-to-silicon power diode.


ON Semiconductor MBR120VLSFT1 Schottky Power Rectifier Datasheet - cover page
Brand
ON Semiconductor
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
57 KB
Published
01 August, 2012
Updated
30 September, 2023
MD5 checksum
529E38C43F215FA8B1A095345F8B31D8

About this manual

The MBR120VLSFT1 is a surface mount Schottky power rectifier designed for low voltage, high frequency rectification and polarity protection. It utilizes a large area metal-to-silicon power diode and is available in a plastic SOD-123 package. The device is optimized for very low forward voltage and features a guardring for stress protection, making it suitable for portable and battery-powered products.

What's inside

  • Features
  • Mechanical Characteristics
  • Ordering Information
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Package Dimensions

Specifications

Package TypeSOD-123

Frequently asked questions

What is the maximum operating junction temperature?

The maximum operating junction temperature is 125°C.

What is the maximum peak repetitive reverse voltage?

The device can withstand a peak repetitive reverse voltage of up to 20 V.

What is the maximum lead temperature allowed for soldering purposes?

The leads can be exposed to a maximum temperature of 260°C for up to 10 seconds during soldering.

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