ON Semiconductor NTB125N02R/NTP125N02R Power MOSFET Datasheet

This datasheet provides the characteristics parameters of 125N02R/D MOSFET, including maximum voltage, maximum current, maximum power, maximum temperature, etc.


ON Semiconductor NTB125N02R/NTP125N02R Power MOSFET Datasheet - cover page
Brand
ON Semiconductor
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
68 KB
Published
12 July, 2012
Updated
30 September, 2023
MD5 checksum
8A65497D7D4FF00B665C382BD5E75A76

About this manual

This document provides technical specifications for the NTB125N02R and NTP125N02R N-Channel Power MOSFETs. The devices feature a 125 ampere continuous drain current and a 24 volt drain-to-source voltage rating. They are designed for fast switching performance and include an optimized body diode for synchronous operation.

What's inside

  • Features
  • Maximum Ratings
  • Electrical Characteristics
  • Switching Characteristics
  • Package Dimensions
  • Ordering Information

Specifications

Drain-to-Source Voltage24 V
Continuous Drain Current (TO-220)125 A
Continuous Drain Current (D2PAK)120.5 A
Thermal Resistance Junction-to-Case11 °C/W
Operating Temperature Range-55 to 150 °C

Frequently asked questions

What are the available packages for this MOSFET?

The device is available in TO-220AB and D2PAK packages.

What is the maximum gate-to-source voltage?

The maximum continuous gate-to-source voltage is +20 V.

What is the typical total gate charge?

The typical total gate charge is 23.6 nC.

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