ON Semiconductor NUP2301MW6T1 Low Capacitance Diode Array Datasheet

NUP2301MW6T1 is a low capacitance diode array for ESD protection in two data lines. The device is designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge).


ON Semiconductor NUP2301MW6T1 Low Capacitance Diode Array Datasheet - cover page
Brand
ON Semiconductor
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
91 KB
Published
12 July, 2012
Updated
30 September, 2023
MD5 checksum
B8C58FFD858AEB308A6DBB095B5CAAE6

About this manual

The NUP2301MW6T1 is a Microlntegration™ device designed to protect sensitive components from harmful electrical transients, such as electrostatic discharge (ESD). It features single package integration and ensures data line speed and integrity while minimizing board space requirements. The device provides ESD protection compliant with JEDEC Standards JESD22 Machine Model Class C and Human Body Model Class 3B.

What's inside

  • Features
  • Applications
  • Maximum Ratings
  • Pin Configuration
  • Thermal Characteristics
  • Electrical Characteristics

Specifications

Reverse Voltage (VR)70 Vdc
Forward Current (IF)200 mAdc
Peak Forward Surge Current (IFM)500 mAdc
Repetitive Peak Reverse Voltage (VRRM)70 Vv
Repetitive Peak Forward Current (IFRM)450 mA
Non-Repetitive Peak Forward Current (Iesm)1 A
Thermal Resistance Junction-to-Ambient (RθJA)625 °C/W

Frequently asked questions

What is the maximum capacitance between I/O lines?

The maximum capacitance between I/O lines is 2.0 pF.

What ESD protection standards does this device meet?

It provides ESD Protection for JEDEC Standards JESD22 Machine Model = Class C and Human Body Model = Class 3B.

What is the package type?

The device uses an SC-88 package.

Download PDF (91 KB)

More ON Semiconductor Manuals


View all ON Semiconductor manuals →