IXGP2N100 is a product of IXYS
This document is a technical datasheet published by IXYS in 2000. It provides detailed information regarding various models of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and Insulated Gate Bipolar Transistors (IGBTs). The text covers maximum ratings, test conditions, electrical characteristics, and application notes for the specified product series.
The devices are covered by U.S. patents 4,835,592, 4,881,106, 5,017,508, 5,049,961, 5,187,117, 5,486,715, 4,850,072, 4,931,844, 5,034,796, 5,063,307, 5,237,481, and 5,381,025.