IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. It features a floating channel designed for bootstrap operation, fully operational to +600V, tolerant to negative transient voltage, and immune to dV/dt. It has a gate drive supply range from 10 to 20V, undervoltage lockout, CMOS Schmitt-triggered inputs with pull-down, and output in phase with input (IR2117) or out of phase with input (IR2118).
The IR2117/IR2118 (S) is a high voltage, high speed power MOSFET and IGBT driver designed for bootstrap operation. It utilizes proprietary HVIC and latch immune CMOS technologies to enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs, and the output driver features a high pulse current buffer stage designed for minimum cross-conduction.
| High side floating supply voltage | -0.3 to 625 V |
|---|---|
| Turn-on propagation delay | 125 ns typ. |
| Turn-off propagation delay | 105 ns typ. |
The maximum high side floating supply voltage is 625 V.
The device can sustain a maximum high side floating supply voltage of 625 V.