This document provides the maximum ratings of the Silicon Switching Diode Array SMBD 2835 and SMBD 2836 from Semiconductor Group 1, including reverse voltage, forward current, junction temperature, total power dissipation, storage temperature range, peak reverse voltage, surge forward current, and thermal resistance. The electrical characteristics of SMBD 2835 and SMBD 2836 at 25˚C are also provided, such as breakdown voltage, reverse current, reverse recovery time, and forward voltage.
This document is a technical datasheet for the Siemens SMBD 2835 and SMBD 2836 Silicon Switching Diode Arrays. These components are designed for high-speed switching applications and feature a common anode configuration. The datasheet provides detailed electrical characteristics, maximum ratings, and performance curves for both models.
| Reverse voltage | 30 V (SMBD 2835), 50 V (SMBD 2836) |
|---|---|
| Peak reverse voltage | 35 V (SMBD 2835), 75 V (SMBD 2836) |
| Forward current | 200 mA |
| Surge forward current | 45 A |
| Total power dissipation | 330 mW |
| Junction temperature | 150 °C |
They are designed for high-speed switching applications.
The diodes feature a common anode configuration.