Philips BUK107-50DS PowerMOS Transistor Datasheet

This document is a detailed specification sheet for the BUK107-50DS power MOSFET produced by PHILIPS. The product is a logic-level power MOSFET with overload protection and is suitable for automotive systems and other applications.


Philips BUK107-50DS PowerMOS Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
60 KB
Published
06 July, 2012
Updated
01 October, 2023
MD5 checksum
A9ED20CEAC5E43FF1E8B9BC7FC84FCD6

About this manual

This document is a product specification for the Philips BUK107-50DS, a monolithic overload-protected logic level power MOSFET (TOPFET). It is designed as a general-purpose switch for automotive systems and other applications, intended for surface mount plastic packaging.

The device includes features such as vertical power DMOS output stage, overload protection via current limiting and overtemperature sensing, and latched overload protection reset by the input. It is suitable for driving lamps, small motors, and solenoids.

What's inside

  • Description
  • Applications
  • Features
  • Pinning
  • Limiting Values
  • Overload Protection
  • Thermal Characteristics
  • Static Characteristics
  • Switching Characteristics
  • Mechanical Data

Specifications

Continuous drain source voltage50 V
Continuous drain current0.7 A
Drain-source on-state resistance175 mΩ
Total power dissipation1.8 W
Continuous junction temperature150 °C
Package typeSOT223

Frequently asked questions

What is the maximum continuous drain current for this transistor?

The maximum continuous drain current is 0.7 A.

What is the maximum total power dissipation at 25 °C?

The maximum total power dissipation is 1.8 W.

What is the maximum continuous junction temperature?

The maximum continuous junction temperature is 150 °C.

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