This document is about the product specification of PUMD10 NPN/PNP resistor-equipped transistors. The device features transistors with different polarity and built-in bias resistors R1 and R2, which simplifies circuit design and reduces the number of components and board space.
The Philips PUMD10 is a discrete semiconductor component featuring an NPN and a PNP transistor with built-in bias resistors (R1 and R2). This configuration eliminates the need for external resistors, simplifying circuit design and reducing board space, making it ideal for portable equipment inverter circuits. The device is housed in a plastic SC-88 (SOT363) surface-mounted package.
| Package Type | SC-88 (SOT363) |
|---|---|
| Collector-Base Voltage (VCBO) | - 50 V |
| Collector-Emitter Voltage (VCEO) | - 50 V |
| Emitter-Base Voltage (VEBO) | - 10 V |
| Output Current (DC) | - 100 mA |
| Peak Collector Current (ICM) | - 100 mA |
| Total Power Dissipation (Per Transistor) | - 200 mW |
| Total Power Dissipation (Per Device) | - 300 mW |
| Thermal Resistance (Junction to Ambient) | 416 K/W |
| Input Resistor 1 (R1) | 2.2 kΩ (Typical) |
The built-in bias resistors have typical values of 2.2 kΩ for R1 and 47 kΩ for R2.
The maximum total power dissipation is 300 mW when the ambient temperature is 25°C.
The maximum operating ambient temperature is +150°C.