The document describes the product overview, features, and applications of PNP/PNP resistor-equipped transistors. The product features built-in bias resistors, simplifies circuit design, reduces component count, and reduces pick and place cost.
This datasheet describes the Philips PEMB14 and PUMB14, which are PNP/PNP resistor-equipped transistors designed to simplify circuit design and reduce component count. These devices feature built-in bias resistors (R1 = 47 kΩ, R2 = open) and are suitable for low current peripheral driver applications and controlling IC inputs. They serve as replacements for general-purpose transistors in digital applications.
| Collector-emitter voltage (Vceo) | -50 V |
|---|---|
| Bias resistor 1 (R1) | 47 kΩ |
| Total power dissipation (SOT363) | 200 mW |
| Total power dissipation (SOT666) | 200 mW |
The built-in input bias resistor (R1) has a typical value of 47 kΩ.
The maximum total power dissipation for the SOT666 package is 200 mW at an ambient temperature below 25 °C.
The maximum collector-emitter voltage rating is 50 V.