FDH038AN08A1 is a N-channel power tube produced by Fairchild Semiconductor Corporation. Its main features are RDS(ON) = 3.5mΩ, Vgs = 10V, ID = 80A, Qg(tot) = 125nC, Vgs = 10V, internal gate resistor Rg = 20Ω, with low Miller charge, low QRR body diode, UIS capability (single pulse and repetitive pulse) and meets AEC Q101 specifications.
This document is a datasheet for the Fairchild FDH038AN08A1, an N-Channel PowerTrench MOSFET designed for high-power applications. The device features a 75V drain-to-source voltage rating, 80A continuous drain current, and a typical on-resistance of 3.5mQ. It includes an internal gate resistor and is qualified to AEC Q101 for automotive use.
The datasheet provides comprehensive electrical characteristics, including off-state breakdown voltage, on-state resistance, and dynamic parameters like gate charge and switching times. It also details thermal characteristics, safe operating areas, and typical performance curves for various conditions.
| Drain to Source Voltage | 75 V |
|---|---|
| On Resistance | 3.5mQ (Typ.) |
| Operating Temperature | -55 to 175 °C |
| Total Gate Charge | 125 nC (Typ.) |
The typical on-resistance is 3.5mQ.
Yes, it is Qualified to AEC Q101.
The operating and storage temperature range is -55 to 175 °C.