UPA831TC is an NPN silicon epitaxial twin transistor with a small package outline, suitable for portable wireless applications. It features a low height profile, reduced lead inductance, and two different die types.
The NEC UPA831TC is an NPN silicon epitaxial twin transistor housed in a small TC package measuring 1.5mm x 1.1mm. It contains two independently mounted chips: NE856, ideal for oscillator applications, and NE681, ideal for buffer amplifier applications. The device is designed for portable wireless applications where reducing board space is a primary consideration.
| Package Dimensions | 1.5mm x 1.1 mm |
|---|---|
| Package Height | 0.55 mm |
| DC Current Gain (Q1) | 70 to 140 |
| Gain Bandwidth (Q1) | 3.0 to 4.5 GHz |
| DC Current Gain (Q2) | 70 to 150 |
| Gain Bandwidth (Q2) | 4.5 to 7.0 GHz |
| Collector to Base Voltage (Q1) | 20 V |
| Collector Current (Q1) | 100 mA |
The device contains Q1, which is ideal for oscillator transistor applications, and Q2, which is ideal for buffer amplifier transistor applications.
It is ideal for all portable wireless applications where reducing board space is a prime consideration.