The document describes the NEC BA1L4M, an NPN silicon transistor designed specifically for use in medium speed switching circuits. It features built-in bias resistors of 47kΩ.
The datasheet provides comprehensive technical data including absolute maximum ratings such as a junction temperature limit of 150°C and a total power dissipation of 250 mW at Tg = 25°C. It also lists detailed electrical characteristics like input resistance, current gain, and switching times.
| Transistor Type | NPN Silicon Transistor |
|---|---|
| Bias Resistors | Built-in type NPN transistor equivalent circuit |
| Storage Temperature | -55 to +150 °C |
| Junction Temperature (Max) | 150 °C |
| Total Power Dissipation (Tg = 25 °C) | 250 mW |
| Collector to Emitter Voltage (Max) | 50 V |
| Emitter to Base Voltage (Max) | 10 V |
| Collector Current DC (Max) | 100 mA |
The typical turn on time is 0.7 µs under test conditions of Voc=5.0V and RL=1.0 kΩ.
The maximum total power dissipation is 250 mW when the temperature is 25 °C.
The maximum DC collector current is 100 mA.